Bs250 Mosfet

Bs250 Pmos Datasheet
Bs250 Datasheet
Bs250 Mosfet Equivalent
Bs250 P Channel Mosfet

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 500 mA DC. BS250 Q2 Q4 Id d s g Id Ig=0 g d Vgs s Ig = 0 Q1 2N7000 Id Q5 NFET Q6 PFET primarily digital symbols Figure 3: MOSFET Schematic Symbol and its Switch Model We can use the spice model of a voltage controlled switch to compare the behavior of the MOSFET with a mechanical switch that is actuated by a voltage. With the MOSFET in our previous netlist. BS250 Vishay / Siliconix MOSFET 45V 0.18A 0.83W datasheet, inventory, & pricing.

Type Designator: BS250P

Bs250 Pmos Datasheet

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.7 W

Maximum Drain-Source Voltage |Vds|: 45 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 0.23 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 14 Ohm

Package: ELINE

BS250P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BS250P Datasheet (PDF)

0.1. bs250p.pdf Size:48K _diodes

P-CHANNEL ENHANCEMENTBS250PMODE VERTICAL DMOS FETISSUE 2 SEPT 93 T V I VD D D T V E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C). T I T IT DITI D i VD V ID V V V I V V ID VD V T I V I I V V VD V V I ID V V

0.2. bs250pstoa bs250pstob bs250pstz.pdf Size:34K _zetex

9.1. bs250 cnv 2.pdf Size:50K _philips

DISCRETE SEMICONDUCTORSDATA SHEETBS250P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBS250D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel enhancement modeDrain-source voltage -VDS max. 45 Vvertical D-M

9.2. tp0610l tp0610t vp0610l vp0610t bs250.pdf Size:70K _vishay

TP0610L/T, VP0610L/T, BS250Vishay SiliconixP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18FEATUR

9.3. bs250kl-tr1-e3 tp0610kl bs250kl.pdf Size:89K _vishay

TP0610KL/BS250KLNew ProductVishay SiliconixP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD ESD Protected: 2000 VV(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)APPLICATIONS6 @ VGS = -10 V -0.27-60 -1 to 3060 1 to -3.010 @ VGS = -4.5 V -0.21D Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.D Battery Oper

9.4. bs250f.pdf Size:80K _diodes

SOT23 P-CHANNEL ENHANCEMENTBS250FMODE VERTICAL DMOS FETISSUE 3 - JANUARY 1996SDG T I D T I SOT23ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V V V I T I V V ID VD V V I I V V VD V V I D i

9.5. bs250csm4.pdf Size:16K _semelab

BS250CSM4PCHANNEL ENHANCEMENT MODE IN ACERAMIC SURFACE MOUNT PACKAGE FORMECHANICAL DATAHIGH REL APPLICATIONSDimensions in mm (inches)1.40 0.155.59 0.13(0.055 0.006)(0.22 0.005)0.25 0.03 FEATURES(0.01 0.001)0.23rad.(0.009) VDSS = 45V3 20.23 ID = 0.18A4 1m(0.009) rdson = 14 ohms1.02 0.20 2.03 0.20(0.04 0.008) (0

9.6. bs250fta bs250ftc.pdf Size:60K _zetex

Datasheet: BFT46, BS107P, BS107PT, BS108, BS170, BS170F, BS170P, BS250F, BF245A, BS270, BSN254, BSN254A, BSP92, BSR56, BSR57, BSR58, BSS100.